Statistical Fluctuations in HfO<sub><i>x</i></sub> Resistive-Switching Memory: Part II—Random Telegraph Noise

Stefano Ambrogio(IBM (United States)), Daniele Ielmini(Politecnico di Milano), Antonio Cubeta(Politecnico di Milano), Alessandro Calderoni(Micron (United States)), Simone Balatti, Nirmal Ramaswamy(Micron (United States))
IEEE Transactions on Electron Devices
July 2, 2014
10.1109/ted.2014.2330202
Cited by 128

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