Statistical Fluctuations in HfO<sub><i>x</i></sub> Resistive-Switching Memory: Part II—Random Telegraph Noise

Stefano Ambrogio(IBM Research - Almaden), Daniele Ielmini(Politecnico di Milano), Antonio Cubeta(Politecnico di Milano), Alessandro Calderoni(Micron (United States)), Simone Balatti, Nirmal Ramaswamy(Micron (United States))
IEEE Transactions on Electron Devices
July 2, 2014
10.1109/ted.2014.2330202
Cited by 128

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