Semi-analytical current source modeling of FinFET devices operating in near/sub-threshold regime with independent gate control and considering process variationTiansong Cui, Massoud Pedram, Shahin Nazarian et al.|Unknown|2014Cited by 10
Leakage power reduction for deeply-scaled FinFET circuits operating in multiple voltage regimes using fine-grained gate-length biasing techniqueJi Li, Massoud Pedram, Yanzhi Wang et al.|Design, Automation, and Test in Europe|2015Cited by 7
Standard cell library based layout characterization and power analysis for 10nm gate-all-around (GAA) transistorsLuhao Wang, Massoud Pedram, Tiansong Cui et al.|Unknown|2016Cited by 6
Layout Characterization and Power Density Analysis for Shorted-Gate and Independent-Gate 7nm FinFET Standard CellsTiansong Cui, Massoud Pedram, Bowen Chen et al.|Unknown|2015Cited by 5
Semi-analytical current source modeling of near-threshold operating logic cells considering process variationsQing Xie, Massoud Pedram, Tiansong Cui et al.|Unknown|2013Cited by 5