Excellent stability of GaN-on-Si HEMTs with 5 µm gate-drain spacing tested in off-state at a record drain voltage of 200 V and 200℃Denis Marcon, G. Borghs, Stefan Degroote et al.|Unknown|2009Cited by 0
Self-heating assesment of GaN DHFETs using mono-lithically fabricated 2-DEG resistorsPuneet Srivastava, Gustaaf Borghs, Robert Mertens et al.|Unknown|2010Cited by 0
Preliminary reliability assessment of GaN-on-Si HEMT using in-situ Si3N4 cap layerDenis Marcon, Gustaaf Borghs, Anne Lorenz et al.|Unknown|2008Cited by 0