Excellent stability of GaN-on-Si HEMTs with 5 µm gate-drain spacing tested in off-state at a record drain voltage of 200 V and 200℃
Denis Marcon, G. Borghs, Joff Derluyn, Maarten Leys(IMEC), Stefan Degroote(IMEC), Domenica Visalli, Jayoti Das, Kuan Cheng, Marianne Germain, M. Van Hove(IMEC), F Medjdoub, Robert Mertens(Humboldt-Universität zu Berlin)
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