Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopyVas. P. Kunets, Gregory J. Salamo, D. Guzun et al.|Journal of Applied Physics|2008Cited by 18
Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel ThicknessJulia Dobbert, Gregory J. Salamo, Vasyl P. Kunets et al.|IEEE Transactions on Electron Devices|2008Cited by 6
Investigation of deep levels in InGaAs channels comprising thin layers of InAsJulia Dobbert, Greg Salamo, W. T. Masselink et al.|Journal of Materials Science Materials in Electronics|2007Cited by 3