Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy
Vas. P. Kunets(University of Arkansas at Fayetteville), Gregory J. Salamo(University of Arkansas at Fayetteville), D. Guzun(University of Arkansas at Fayetteville), P. M. Lytvyn(V.E. Lashkaryov Institute of Semiconductor Physics), V. G. Dorogan(University of Arkansas at Fayetteville), Morgan E. Ware(University of Arkansas at Fayetteville), Timothy A. Morgan(Naval Surface Warfare Center), Yu. I. Mazur(University of Arkansas at Fayetteville), John L. Shultz(University of Arkansas at Fayetteville)
Cited by 18
Related Papers
Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
|AIP Advances|2013|79
Scalable Chitosan-Graphene Oxide Membranes: The Effect of GO Size on Properties and Cross-Flow Filtration Performance
|ACS Omega|2017|77
Dark Current Analysis on GeSn p-i-n Photodetectors
|Sensors|2023|45
InGaAs quantum wire intermediate band solar cell
|Applied Physics Letters|2012|23
Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
|Applied Surface Science|2019|18