Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel ThicknessJulia Dobbert, Gregory J. Salamo, Yuriy I. Mazur et al.|IEEE Transactions on Electron Devices|2008Cited by 6
Investigation of deep levels in InGaAs channels comprising thin layers of InAsJulia Dobbert, Greg Salamo, Vas. P. Kunets et al.|Journal of Materials Science Materials in Electronics|2007Cited by 3