Au‐Free Ti/Al/Ni/TiN Ohmic Contact to AlGaN/GaN Heterostructure: Ti/Al Thicknesses at an Optimized RatioMaoqing Ling, Wen Liu, Yinchao Zhao et al.|physica status solidi (a)|2024Cited by 3
High I<sub>ON</sub>/I<sub>OFF</sub> Ratio > 10<sup>5</sup> Ag-Gated E-Mode GaN p-FETs Enabled by p<sup>++</sup>-GaN Contact and Polarization-Enhanced AlN LayerZhiwei Sun, Wen Liu, Sen Huang et al.|Unknown|2025Cited by 2
Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platformZhiwei Sun, Wen Liu, Tianyu Zhao et al.|Applied Physics Letters|2025Cited by 2