High I<sub>ON</sub>/I<sub>OFF</sub> Ratio > 10<sup>5</sup> Ag-Gated E-Mode GaN p-FETs Enabled by p<sup>++</sup>-GaN Contact and Polarization-Enhanced AlN Layer
Zhiwei Sun(Xi’an Jiaotong-Liverpool University), Wen Liu(State Key Laboratory of Chemical Engineering), Harm van Zalinge(University of Liverpool), Sen Huang(Institute of High Energy Physics), Kain Lu Low(University of Liverpool), Xuming Zhang, Ivona Z. Mitrović(University of Liverpool), Weisheng Wang(University of Liverpool), Maoqing Ling(University of Liverpool), Hao Tian(Harbin Institute of Technology), Jie Zhang(Hefei University of Technology), Yinchao Zhao(University of Liverpool)
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