Gate-length dependence of DC and microwave properties of submicrometer In/sub 0.53/Ga/sub 0.47/As HIGFETsM.D. Feuer, T. Y. Chang, B. Tell et al.|IEEE Electron Device Letters|1989Cited by 12
High aspect ratio 0.1 μm tungsten gates for InGaAs/InAlAs heterojunction transistorsD. M. Tennant, R. W. Epworth, S.C. Shunk et al.|Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena|1989Cited by 11