High aspect ratio 0.1 μm tungsten gates for InGaAs/InAlAs heterojunction transistors

D. M. Tennant(University of Tennessee at Knoxville), R. W. Epworth, R. E. Behringer(AT&T (United States)), J-M. Kuo(AT&T (United States)), T. Y. Chang(AT&T (United States)), S.C. Shunk(AT&T (United States)), M.D. Feuer(AT&T (United States))

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

November 1, 1989

10.1116/1.584676

Cited by 11

Related Papers

Proximate Kitaev quantum spin liquid behaviour in a honeycomb magnet

|Unknown|2016|863

Neutron scattering in the proximate quantum spin liquid α-RuCl <sub>3</sub>

|Science|2017|724

Quantum Criticality in an Ising Chain: Experimental Evidence for Emergent E <sub>8</sub> Symmetry

|Science|2010|722

Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>f</mml:mi></mml:mrow></mml:mfrac></mml:math>?) Noise

|Physical Review Letters|1984|711

Dirac Strings and Magnetic Monopoles in the Spin Ice Dy <sub>2</sub> Ti <sub>2</sub> O <sub>7</sub>

|Science|2009|607