Gate-length dependence of DC and microwave properties of submicrometer In/sub 0.53/Ga/sub 0.47/As HIGFETs

M.D. Feuer(AT&T (United States)), T. Y. Chang(AT&T (United States)), B. Tell(AT&T (United States)), D. M. Tennant(University of Tennessee at Knoxville), S.C. Shunk(AT&T (United States)), J. M. Kuo(AT&T (United States))

IEEE Electron Device Letters

February 1, 1989

10.1109/55.32432

Cited by 12

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