HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>multilayer for RRAM arrays: a technique to improve tail-bit retentionXueyao Huang, He Qian, Gary Bronner et al.|Nanotechnology|2016Cited by 54
Ultrafast RESET Analysis of HfO<i><sub>x</sub></i>‐Based RRAM by Sub‐Nanosecond PulsesChen Wang, He Qian, Huaqiang Wu et al.|Advanced Electronic Materials|2017Cited by 53
Relaxation Effect in RRAM Arrays: Demonstration and CharacteristicsChen Wang, He Qian, G. Bronner et al.|IEEE Electron Device Letters|2015Cited by 52