HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>multilayer for RRAM arrays: a technique to improve tail-bit retention

Xueyao Huang(Institute of Microelectronics), He Qian(University of Science and Technology of China), Lingjun Dai(Institute of Microelectronics), Huaqiang Wu(Beijing Advanced Sciences and Innovation Center), Deepak Sekar(Rambus (United States)), M. Kellam(Rambus (United States)), Bin Gao(Chinese Academy of Sciences), Gary Bronner(Rambus (United States)), Ning Deng(Fujitsu (China))
Nanotechnology
August 18, 2016
10.1088/0957-4484/27/39/395201
Cited by 54

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