Novel Heat Dissipating Cell Scheme for Improving a Reset Distribution in a 512M Phase-change Random Access Memory (PRAM)
Dahyun Kang, Kinam Kim(University of Houston), Youngbum Jun, Junyoung Park, Nam-Jeon Kim, Shuyan Song(Chinese Academy of Sciences), Kyung‐Chang Ryoo, Daewon Ha(University of California, Berkeley), Dokshin Lim, J.H. Park(Samsung (South Korea)), Jae-Ho Shin, Junho Yu, K. W. Lee, Yoonsuk Kim(Samsung (South Korea)), Yongtak Kim(Samsung (South Korea)), M.K. Lee, Yongjun Song(Seoul Medical Center), C.Y. Eum, J. I. Kim, Jae Hoon Cheong(Jeonbuk National University), Show‐Long Patrick Koh, Junghwan Oh(Pukyong National University), G.H. Koh, Kyuhong Sim, Ji‐Yeon Kim(INTRASOFT International (Luxembourg)), Jung Hee Kim(Seoul National University Hospital), H.S. Jeong, J.H. Kong, Young‐Taek Oh, S.S. Park, G.T. Jeong, F. Yeung, K. C. Park(Ulsan National Institute of Science and Technology), C.W. Jeong, Woon Ik Park
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