Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS<sub>2</sub>, h-BN, and GaN HeterostructureHyun Jeong, Mun Seok Jeong, Gilles Lérondel et al.|ACS Nano|2015Cited by 107
Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodesHyun Jeong, Mun Seok Jeong, Hyeon Jun Jeong et al.|Scientific Reports|2015Cited by 103
Metal–Insulator–Semiconductor Diode Consisting of Two-Dimensional NanomaterialsHyun Jeong, Mun Seok Jeong, Hye Min Oh et al.|Nano Letters|2016Cited by 85
Integrated Freestanding Two‐dimensional Transition Metal DichalcogenidesHyun Jeong, Gilles Lérondel, Hye Min Oh et al.|Advanced Materials|2017Cited by 42
Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patternsHyun Jeong, Mun Seok Jeong, Rafael Salas‐Montiel et al.|Scientific Reports|2017Cited by 26