Metal–Insulator–Semiconductor Diode Consisting of Two-Dimensional Nanomaterials
Hyun Jeong(Gwangju Institute of Science and Technology), Mun Seok Jeong(Hanyang University), Hye Min Oh(Institute for Basic Science), Ki Kang Kim(Dongguk University), Gang Han(Guangxi University), Sung Jin An(Institute for Basic Science), Seungho Bang(Institute for Basic Science), Jin Cheol Park(Institute for Basic Science), Hyun Kim(Institute for Basic Science), Young Hee Lee(Korea Research Institute of Standards and Science), Gilles Lérondel(Centre National de la Recherche Scientifique), Hyeon Jun Jeong(Centre National de la Recherche Scientifique), Seok Joon Yun(Oak Ridge National Laboratory)
Cited by 85
Related Papers
Recent development of two-dimensional transition metal dichalcogenides and their applications
|Materials Today|2017|2.7k
Bandgap engineering of two-dimensional semiconductor materials
|npj 2D Materials and Applications|2020|1.2k
Phase patterning for ohmic homojunction contact in MoTe <sub>2</sub>
|Science|2015|1.2k
Bandgap opening in few-layered monoclinic MoTe2
|Nature Physics|2015|1k
Glutathione-Mediated Delivery and Release Using Monolayer Protected Nanoparticle Carriers
|Journal of the American Chemical Society|2006|814