Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS<sub>2</sub>, h-BN, and GaN Heterostructure
Hyun Jeong(Gwangju Institute of Science and Technology), Mun Seok Jeong(Hanyang University), Hye Min Oh(Institute for Basic Science), Ki Kang Kim(Dongguk University), Gang Han(Guangxi University), Sung Jin An(Institute for Basic Science), Seungho Bang(Institute for Basic Science), Jin Cheol Park(Institute for Basic Science), Young Hee Lee(Korea Research Institute of Standards and Science), Hyun Kim(Institute for Basic Science), Hyeon Jun Jeong(Centre National de la Recherche Scientifique), Gilles Lérondel(Centre National de la Recherche Scientifique)
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