L

L. Bouetel

Texas Instruments (France)

Publishes on Low-power high-performance VLSI design, Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design. 9 papers and 111 citations.

9Publications
111Total Citations

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Top publicationsby citations

90nm low leakage SoC design techniques for wireless applications
Philippe Royannez, H. Mair, Franck Dahan et al.|Unknown|2005
Cited by 100

The new generation of multimedia-application processors requires a drastic leakage reduction to bring the standby current to 50/spl mu/A. An efficient set of leakage reduction techniques, including power gating, memory retention, voltage scaling, and dual V/sub t/, is employed on a 50M transistor, 80mm/sup 2/ IC, fabricated in a 90nm CMOS technology, resulting in a 40/spl times/ leakage reduction.

A Leakage Management System Based on Clock Gating Infrastructure for a 65-nm Digital Base-Band Modem Chip
U. Ko, C. Raibaut, J. Ciroux et al.|Unknown|2006
Cited by 10

In this paper we present a leakage management system which takes advantage of the existing clock gating infrastructure. This methodology avoids both RTL and software changes, at the block and chip level. We illustrate this approach with a 65-nm digital base band modem while achieving standby leakage in the 100-muA range and overall 1200times leakage reduction including process, circuit and system optimization

Leakage Power Reduction Techniques applied to 90-nm SoC Application Processor
Philippe Royannez, H. Mair, Franck Dahan et al.|Unknown|2006
Cited by 1

At the 90-nm, leakage currents bring standby power to an unacceptable level and circuit level techniques become mandatory. However applying these techniques must be robust and practical. In this paper we focus not only on leakage reduction solutions but also on their deployment as a worldwide infrastructure as the added-value resides not only in the techniques themselves but also in the way they are implemented to build an efficient, re-usable, robust, low cost and portable platform. Techniques have been silicon proven on the 90-nm TI CMOS technology and is commonly used to design SoC with complexities over 100 Million transistors.

Re-Using Clock Management Unit to implement Power Gating and Retention for Leakage Reduction at the 65-nm Technology Node
Philippe Royannez, F. Jumel, H. Mair et al.|Unknown|2007
Cited by 0

Leakage power management, wireless SoC In this paper we present a leakage management system which takes advantage of the existing clock gating infrastructure. This methodology avoids both RTL and software changes, at the block and chip level. We illustrate this approach with a 65-nm digital base band modem while achieving standby leakage in the 100-uA range and overall 1200X leakage reduction including process, circuit and system optimization.

A design platform for 90-nm leakage reduction techniques
Philippe Royannez, H. Mair, Franck Dahan et al.|Proceedings. 42nd Design Automation Conference, 2005.|2005
Cited by 0

Methodology, EDA Flow, scripts, and documentation plays a tremendous role in the deployment and standardization of advanced design techniques. In this paper we focus not only on leakage reduction techniques but also on their deployment as a worldwide infrastructure as the added-value resides not only in the techniques themselves but also in the way they are implemented to build an efficient, re-usable, robust, low cost and portable platform. Techniques have been silicon proven on the 90-nm TI CMOS technology and is commonly used to design SoC with complexities over 100 Million transistors.