A design platform for 90-nm leakage reduction techniques
Philippe Royannez(Texas Instruments (France)), H. Mair(Texas Instruments (France)), Franck Dahan(Texas Instruments (France)), M. Wagner(Texas Instruments (France)), M. Streeter(Texas Instruments (France)), L. Bouetel(Texas Instruments (France)), J. Blasquez(Texas Instruments (France)), H. Clasen(Texas Instruments (France)), G. Semino(Texas Instruments (France)), J. Dong(Texas Instruments (France)), D.B. Scott(Texas Instruments (France)), B. Pitts(Texas Instruments (France)), C. Raibaut(Texas Instruments (France)), Uming Ko(Texas Instruments (France))
Cited by 0
Abstract
Methodology, EDA Flow, scripts, and documentation plays a tremendous role in the deployment and standardization of advanced design techniques. In this paper we focus not only on leakage reduction techniques but also on their deployment as a worldwide infrastructure as the added-value resides not only in the techniques themselves but also in the way they are implemented to build an efficient, re-usable, robust, low cost and portable platform. Techniques have been silicon proven on the 90-nm TI CMOS technology and is commonly used to design SoC with complexities over 100 Million transistors.
Related Papers
No related papers found
Powered by citation graph analysis