Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistorsKwan‐Ho Kim, Deep Jariwala, Yi Wan et al.|Nature Nanotechnology|2023Cited by 209
A scalable ferroelectric non-volatile memory operating at 600 °CDhiren K. Pradhan, Deep Jariwala, David C. Moore et al.|Nature Electronics|2024Cited by 95
High-Density, Localized Quantum Emitters in Strained 2D SemiconductorsGwangwoo Kim, Deep Jariwala, Hyong Min Kim et al.|ACS Nano|2022Cited by 48
Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2Seunguk Song, Deep Jariwala, Srikrishna Chakravarthi et al.|Applied Physics Letters|2023Cited by 21