Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2

Seunguk Song(University of Pennsylvania), Deep Jariwala(California University of Pennsylvania), Hyeon Suk Shin(Ulsan National Institute of Science and Technology), Kyung Yeol(Ulsan National Institute of Science and Technology), Roy H. Olsson(University of Pennsylvania), Srikrishna Chakravarthi(University of Pennsylvania), Gwangwoo Kim(University of Pennsylvania), Zirun Han(University of Pennsylvania), Kwan‐Ho Kim(Korea Telecom (South Korea))
Applied Physics Letters
October 30, 2023
10.1063/5.0169689
Cited by 21

Related Papers

High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
|Nature Communications|2019|316
Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications
|ACS Nano|2023|297
Wurtzite and fluorite ferroelectric materials for electronic memory
|Nature Nanotechnology|2023|252
Machine Learning in Nanoscience: Big Data at Small Scales
|Nano Letters|2019|231
Efficiency Analysis of Magnetic Resonance Wireless Power Transfer With Intermediate Resonant Coil
|IEEE Antennas and Wireless Propagation Letters|2011|211