Self-Aligned Top-Gate Amorphous InGaZnO TFTs With Plasma Enhanced Chemical Vapor Deposited Sub-10 nm SiO<sub>2</sub> Gate Dielectric for Low-Voltage ApplicationsYuqing Zhang, Shengdong Zhang, Ludong Qin et al.|IEEE Electron Device Letters|2019Cited by 37
Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain RegionsHao Peng, Shengdong Zhang, Baozhu Chang et al.|IEEE Transactions on Electron Devices|2020Cited by 31