Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions
Hao Peng(Peking University), Shengdong Zhang(Peking University), Haishi Fu(Peking University), Yuqing Zhang(Fujian Medical University), Lei Lü(Peking University), Huan Yang(Peking University), Baozhu Chang(Peking University), Xiaoliang Zhou(Peking University)
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