Self-Aligned Top-Gate Amorphous InGaZnO TFTs With Plasma Enhanced Chemical Vapor Deposited Sub-10 nm SiO<sub>2</sub> Gate Dielectric for Low-Voltage Applications
Yuqing Zhang(Fujian Medical University), Shengdong Zhang(Peking University), Huan Yang(Peking University), Hao Peng(Peking University), Yunkai Cao(Peking University), Ludong Qin(Peking University)
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