High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer DopingDong‐Ho Kang, Jin‐Hong Park, Myungsoo Kim et al.|Advanced Functional Materials|2015Cited by 298
A High‐Performance WSe<sub>2</sub>/<i>h</i>‐BN Photodetector using a Triphenylphosphine (PPh<sub>3</sub>)‐Based n‐Doping TechniqueSeo‐Hyeon Jo, Jin‐Hong Park, Geun Young Yeom et al.|Advanced Materials|2016Cited by 167
A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memoryKwan-Ho Kim, Jin‐Hong Park, Hyung‐Youl Park et al.|Nanoscale Horizons|2020Cited by 96
Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact DesignHyung‐Youl Park, Jin‐Hong Park, Woo‐Shik Jung et al.|Advanced Materials|2015Cited by 86
Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuitsJaewoo Shim, Jin‐Hong Park, Sung Woon Jang et al.|Nanoscale|2019Cited by 28