Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact Design
Hyung‐Youl Park(Sungkyunkwan University), Jin‐Hong Park(LG (United States)), Byungha Shin(Korea Advanced Institute of Science and Technology), Woo‐Shik Jung(Stanford University), Jaeho Jeon(Sungkyunkwan University), Yongkook Park(Sungkyunkwan University), Gwangwe Yoo(Sungkyunkwan University), Sungjoo Lee(Tohoku University), Jaeho Lee(Samsung (South Korea)), Jinhee Lee(Daegu Gyeongbuk Institute of Science and Technology), Dong‐Ho Kang(Sungkyunkwan University), Yun Hee Jang(Daegu Gyeongbuk Institute of Science and Technology), Seongjun Park(Korea Advanced Institute of Science and Technology), Hyun‐Yong Yu(Korea University)
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