A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory
Kwan-Ho Kim(Suwon Research Institute), Jin‐Hong Park(LG (United States)), Hyung‐Youl Park(Sungkyunkwan University), Keun Heo(Sungkyunkwan University), Jiwan Koo(Suwon Research Institute), Jaewoo Shim(Massachusetts Institute of Technology), Hyun‐Yong Yu(Korea University), Gwangwe Yoo(Sungkyunkwan University), Sungjoo Lee(Tohoku University), Maksim Andreev(Sungkyunkwan University), Kyung Rok Kim(Suwon Research Institute), Kil‐Su Jung(Samsung (South Korea)), Gicheol Shin(Hankuk University of Foreign Studies), Jeong Ho Cho(Yonsei University), Yoonmyung Lee(University of Michigan)
Cited by 96
Related Papers
Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic
|Nature Materials|2008|1.2k
High‐Performance Perovskite–Graphene Hybrid Photodetector
|Advanced Materials|2014|858
Artificial optic-neural synapse for colored and color-mixed pattern recognition
|Nature Communications|2018|709
Stretchable and Multimodal All Graphene Electronic Skin
|Advanced Materials|2016|600
Photoresponse of CsPbBr<sub>3</sub> and Cs<sub>4</sub>PbBr<sub>6</sub> Perovskite Single Crystals
|The Journal of Physical Chemistry Letters|2017|481