Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits
Jaewoo Shim(Massachusetts Institute of Technology), Jin‐Hong Park(LG (United States)), Hyeongjun Kim(Suwon Research Institute), Kwan-Ho Kim(Suwon Research Institute), Changhwan Shin(Korea University), Dae‐Hong Ko(Yonsei University), Keun Heo(Sungkyunkwan University), Sungjoo Lee(Tohoku University), Ji-Hye Lim(Suwon Research Institute), Dong‐Ho Kang(Sungkyunkwan University), Hyun‐Yong Yu(Korea University), Sung Woon Jang(Suwon Research Institute), Seunghwan Seo(Korea Advanced Institute of Science and Technology)
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