Enhancing FeFET Performance Through H<sub>2</sub> Plasma Treatment: Improving Stability, Conductance, and Hamming Distances in FeCAM DesignsZhongping Huang, Ying–Tsan Tang, W. N. Chang et al.|Unknown|2024Cited by 1
Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2Zhongping Huang, Ying–Tsan Tang, S.-M. Wang et al.|Unknown|2023Cited by 0