BTI Reliability Enhancement of Ge-Doped $\text{In}_{2} \mathrm{O}_{3}$ TFTs via $\text{Al}_{2} \mathrm{O}_{3}$ Passivation
Xingtian Wang(University of Notre Dame), Kai Ni(Rochester Institute of Technology), Serges Zambou(ASM International (Finland)), Alessandra Leonhardt(ASM International (Finland)), Sizhe Ma(Carnegie Mellon University), Ranjith K. Ramachandran(Ghent University Hospital), Yushan Lee(University of Notre Dame), Christopher Hinkle(University of Notre Dame), Aditya Chauhan(ASM International (Finland)), Yiyan Yu(University of Notre Dame), Glen Wilk(Arizona Summit Law School), Jiahui Duan(University of Notre Dame), Yixin Qin(University of Notre Dame)
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