Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
F. Ren(Chongqing University), C. R. Abernathy(University of Florida), M. Hong, Matthew A. Marcus, S. J. Pearton(United States Naval Research Laboratory), M. Schurman, S. N. G. Chu, Albert G. Baca(Sandia National Laboratories California)
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