Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
F. Ren(University of Florida), C. R. Abernathy(University of Florida), M. Hong, Matthew A. Marcus(Lawrence Berkeley National Laboratory), S. J. Pearton(University of Florida), M. Schurman, S. N. G. Chu, Albert G. Baca(Sandia National Laboratories California)
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