Enhanced Performance of P-FeFETs with TiN:2.5nm/Mo/TiN Gate Stacks for 3-Bit-Per-Cell Operation, 3.5V Read-After-Write, and High Endurance (10⁹ Cycles) in Compute-in-Memory Applications

Chin‐Yi Tsai, Ying–Tsan Tang, Ming-Wei Hsiung et al.|Unknown|2025

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