Design and circuit applications of PTnMOSFET devices from planar to gate-all-around structuresJyi-Tsong Lin(National Sun Yat-sen University)Discover ElectronicsApril 14, 202510.1007/s44291-025-00056-zCited by 2SaveCiteExport RISWatch citationsRelated PapersTowards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method|Unknown|2012|38Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power|Discover Nano|2024|1