Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower powerJyi-Tsong Lin(National Sun Yat-sen University), Chia-Yo Kuo(National Sun Yat-sen University)Discover NanoJuly 2, 202410.1186/s11671-024-04036-2Cited by 1SaveCiteExport RISWatch citationsRelated PapersTowards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method|Unknown|2012|38Design and circuit applications of PTnMOSFET devices from planar to gate-all-around structures|Discover Electronics|2025|2