High-efficiency free-damage electrochemical shear-thickening polishing of single-crystal silicon carbide
Mingjie Shen(Shaanxi University of Science and Technology), Wei Hang(Zhejiang University of Technology), Binghai Lyu(Zhejiang University of Technology), Suet To(Hong Kong Polytechnic University), Hongyu Chen(Kunming University of Science and Technology), Min Wei(Zhejiang University of Technology), Lingwei Wu(Zhejiang University of Technology), Tufa Habtamu Beri(Adama Science and Technology University), Julong Yuan(Zhejiang University of Technology), Hui Deng(Southern University of Science and Technology)
Cited by 36
Related Papers
Mechanical properties and microstructural change of W–Y2O3 alloy under helium irradiation
|Scientific Reports|2015|122
Preparation and characteristics of W–1wt.% TiC alloy via a novel chemical method and spark plasma sintering
|Powder Technology|2014|70
Study on the affecting factors of material removal mechanism and damage behavior of shear rheological polishing of single crystal silicon carbide
|Journal of Manufacturing Processes|2024|68
Hydrogen retention and affecting factors in rolled tungsten: Thermal desorption spectra and molecular dynamics simulations
|International Journal of Hydrogen Energy|2023|62
Effect of surface quality on hydrogen/helium irradiation behavior in tungsten
|Nuclear Engineering and Technology|2021|58