First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (&lt;10ns), Record-Low Energy (&lt;10fJ) of Data Transfer and Ultra-Long Data Retention (&gt;5000s)

Menggan Liu; Ming Liu; Ling Li; Fuxi Liao; Chunmeng Dou; Di Geng; Guanhua Yang; Congyan Lu; Wei Li; Zijing Wu; Nianduan Lu; Kaifei Chen; Zhi Li; Jiebin Niu; Wendong Lu

doi:10.1109/vlsitechnologyandcir46783.2024.10631551

First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (<10ns), Record-Low Energy (<10fJ) of Data Transfer and Ultra-Long Data Retention (>5000s)

Menggan Liu(Chinese Academy of Sciences), Ming Liu(Chinese Academy of Sciences), Ling Li(Chinese Academy of Sciences), Fuxi Liao(Chinese Academy of Sciences), Chunmeng Dou(Chinese Academy of Sciences), Di Geng(Chinese Academy of Sciences), Guanhua Yang(Guangxi University of Science and Technology), Congyan Lu(Chinese Academy of Sciences), Wei Li, Zijing Wu(Institute for Advanced Study), Nianduan Lu(Chinese Academy of Sciences), Kaifei Chen(Chinese Academy of Sciences), Zhi Li(Chinese Academy of Sciences), Jiebin Niu(Chinese Academy of Sciences), Wendong Lu(Anhui University)

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June 16, 2024

10.1109/vlsitechnologyandcir46783.2024.10631551

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