Van der Waals Heterostructure Engineering for Ultralow-Resistance Contact in 2D Semiconductor P-Type Transistors
Ning Yang(Chinese Academy of Medical Sciences & Peking Union Medical College), Jing Guo(University of Science and Technology of China), Han Wang(IBM Research - Thomas J. Watson Research Center), Jian Zhao(University of Southern California), Ting‐Hao Hsu(University of Southern California), Hongming Zhang(University of Science and Technology of China), Hung‐Yu Chen(University of Southern California)
Cited by 4
Related Papers
Ballistic carbon nanotube field-effect transistors
|Nature|2003|3.2k
One-Dimensional Electrical Contact to a Two-Dimensional Material
|Science|2013|3.1k
Atomically thin p–n junctions with van der Waals heterointerfaces
|Nature Nanotechnology|2014|2.3k
N-Doping of Graphene Through Electrothermal Reactions with Ammonia
|Science|2009|2.2k
Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors
|Physical Review Letters|2008|1.5k