Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors
Xinran Wang(Northeastern University), Hongjie Dai(Xiangtan University), Hailiang Wang(Weifang People's Hospital), Jing Guo(University of Science and Technology of China), Xiaolin Li(Stanford University), Yijian Ouyang(University of Florida)
Cited by 1,489
Related Papers
Ballistic carbon nanotube field-effect transistors
|Nature|2003|3.2k
One-Dimensional Electrical Contact to a Two-Dimensional Material
|Science|2013|3.1k
Atomically thin p–n junctions with van der Waals heterointerfaces
|Nature Nanotechnology|2014|2.3k
N-Doping of Graphene Through Electrothermal Reactions with Ammonia
|Science|2009|2.2k