<scp>Low</scp>‐power<scp>FinFET</scp>based boost converter design using dynamic threshold body biasing technique
Kulbhushan Sharma(Chitkara University), Ashish Sachdeva(Maharishi Markandeshwar University, Mullana), Sandeep Thakur(Government of Himachal Pradesh), M. Elangovan(National Institute of Technology Tiruchirappalli)
International Journal of Numerical Modelling Electronic Networks Devices and Fields
August 21, 2023
Cited by 35
Related Papers
Hyperspectral imaging and its applications: A review
|Heliyon|2024|233
A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time
|AEU - International Journal of Electronics and Communications|2023|74
Design of 10T SRAM cell with improved read performance and expanded write margin
|IET Circuits Devices & Systems|2020|49
Design of a Stable Low Power 11-T Static Random Access Memory Cell
|Journal of Circuits Systems and Computers|2020|47
Design of multi-cell upset immune single-end SRAM for low power applications
|AEU - International Journal of Electronics and Communications|2020|44