A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time
Ashish Sachdeva(Maharishi Markandeshwar University, Mullana), Erfan Abbasian(Babol Noshirvani University of Technology), Deepak Kumar(Chandigarh University)
AEU - International Journal of Electronics and Communications
February 2, 2023
Cited by 74
Related Papers
Hyperspectral imaging and its applications: A review
|Heliyon|2024|233
Design of 10T SRAM cell with improved read performance and expanded write margin
|IET Circuits Devices & Systems|2020|49
Design of a Stable Low Power 11-T Static Random Access Memory Cell
|Journal of Circuits Systems and Computers|2020|47
Design of multi-cell upset immune single-end SRAM for low power applications
|AEU - International Journal of Electronics and Communications|2020|44
A Schmitt-trigger based low read power 12T SRAM cell
|Analog Integrated Circuits and Signal Processing|2020|42