Impact of an AlGaN thin insertion layer in the p-GaN region on InGaN/GaN vertical-cavity surface-emitting laser diodes
Yuhan Zhang(Columbia University), Zi‐Hui Zhang(Nankai University), Chunshuang Chu(Hebei University of Technology), Yonghui Zhang(Hebei University of Technology), Xuejiao Qiu(Hebei University of Technology), Yandi Zhang(Liaoning Normal University), Qing Li(Shanghai Institute of Technical Physics), Quan Zheng, Yuanbin Gao(Hebei University of Technology), Sheng Hang(Hebei University of Technology)
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