A Buried High<i>k</i>Insulator for Suppressing the Surface Recombination for GaN-Based Micro-Light-Emitting DiodesMuyao Zhang, Zi‐Hui Zhang, Yonghui Zhang et al.|IEEE Transactions on Electron Devices|2022Cited by 17
Impact of an AlGaN thin insertion layer in the p-GaN region on InGaN/GaN vertical-cavity surface-emitting laser diodesYuhan Zhang, Zi‐Hui Zhang, Xuejiao Qiu et al.|Micro and Nanostructures|2022Cited by 4
Enhanced optical output of GaN-based near-ultraviolet light-emitting diodes using an ultra-thin air cavity nanopatterned sapphire substrateGai Zhang, Le Chang, Hua Shao et al.|CrystEngComm|2022Cited by 2