Vertical Si-Nanowire <formula formulatype="inline"><tex Notation="TeX">$n$</tex></formula>-Type Tunneling FETs With Low Subthreshold Swing (<formula formulatype="inline"><tex Notation="TeX">$\leq \hbox{50}\ \hbox{mV/decade}$</tex> </formula>) at Room Temperature
Ramanathan Gandhi(Agency for Science, Technology and Research), Sungjoo Lee(Tohoku University), Navab Singh(Agency for Science, Technology and Research), Kaustav Banerjee(University of California, Santa Barbara), Zhixian Chen(ShanghaiTech University)
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