The effect of passivation-layer process to amorphous InGaZnO thin-film transistors using back-channel etch method
Yingtao Xie(Chongqing University of Posts and Telecommunications), Junyan Hu(Scripps Research Institute), Huan Jian(Chongqing University of Posts and Telecommunications), Penglong Chen(Chongqing University of Posts and Telecommunications), Kunlin Cai(Chongqing University of Posts and Telecommunications), Jiaming Weng(Peking University)
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