A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable Memory
Xuehong Wang(East China University of Science and Technology), Qi Liu(State Key Laboratory of Low-Dimensional Quantum Physics), Meng‐Fan Chang(Taiwan Semiconductor Manufacturing Company (Taiwan)), Zhihong Yao(Jinan University), Chixiao Chen(Institute of Microelectronics), Zuheng Wu(Chinese Academy of Sciences), Chunmeng Dou(Chinese Academy of Sciences), Linfang Wang(Chinese Academy of Sciences), Wang Ye(Chinese Academy of Sciences), Jing Liu(Chinese Academy of Sciences), Tuo Shi(Chinese Academy of Sciences), Xumeng Zhang(Institute of Microelectronics), Xiping Jiang(Chinese Academy of Sciences), Junjie An(Chinese Academy of Sciences), Zhaoan Yu(Chinese Academy of Sciences), Chenggao Zhang(Zhejiang Lab)
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