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A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable MemoryXuehong Wang, Qi Liu, Linfang Wang et al.|IEEE Transactions on Electron Devices|2021Cited by 31
Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and SystemChunmeng Dou, Ming Liu, Xiaoxin Xu et al.|Unknown|2021Cited by 13
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