A 28-nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge InferenceWang Ye, Ming Liu, Linfang Wang et al.|IEEE Journal of Solid-State Circuits|2023Cited by 58
Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM With Input-Dependent Sensing ControlLinfang Wang, Qi Liu, Wang Ye et al.|IEEE Transactions on Circuits & Systems II Express Briefs|2021Cited by 44
A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable MemoryXuehong Wang, Qi Liu, Xumeng Zhang et al.|IEEE Transactions on Electron Devices|2021Cited by 31
34.9 A Flash-SRAM-ADC-Fused Plastic Computing-in-Memory Macro for Learning in Neural Networks in a Standard 14nm FinFET ProcessLinfang Wang, Ming Liu, Weizeng Li et al.|Unknown|2024Cited by 22
A near-threshold memristive computing-in-memory engine for edge intelligenceLinfang Wang, Ming Liu, Weizeng Li et al.|Nature Communications|2025Cited by 19