A 14nm 100Kb 2T1R Transpose RRAM with >150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast data-line current stabling scheme
Linfang Wang(Chinese Academy of Sciences), Ming Liu(China Academy of Space Technology), Changxing Huo(Institute of Microelectronics), Meng‐Fan Chang(Taiwan Semiconductor Manufacturing Company (Taiwan)), Xiaoxin Xu(Shanghai University), Jinru Lai(Chinese Academy of Sciences), Chunmeng Dou(Chinese Academy of Sciences), Qi Liu(State Key Laboratory of Low-Dimensional Quantum Physics), Feng Zhang(Institute of Microelectronics), Wang Ye(Chinese Academy of Sciences), Jing Liu(Chinese Academy of Sciences), Jianguo Yang(Institute of Microelectronics), Hiroshi Iwai(Kyoto University), Xin Si(National Tsing Hua University), Hangbing Lv(University of Chinese Academy of Sciences), Dashan Shang(University of Hong Kong)
Unknown
June 13, 2021
Cited by 4
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