Failure Strength Weibull Analysis of 4H-SiC Die through a 3-PB test
Antonio Landi(STMicroelectronics (Italy)), Vincenzo Vinciguerra(STMicroelectronics (Switzerland)), Laura Liaci(STMicroelectronics (Italy)), Aye Aye Mon(STMicroelectronics (Singapore)), Alessandro Sitta(University of Catania), Michele Calabretta(STMicroelectronics (Italy)), Giuseppe D’Arrigo(Institute for Microelectronics and Microsystems), Antonella Sciuto(Institute for Microelectronics and Microsystems), Marco Renna(STMicroelectronics (Switzerland))
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